Senior Memory Technologist (ReRAM)

onsemi is seeking a self-driven and motivated senior technical professional to join the IC Technology Development organization and help define next-generation embedded memory technologies. The successful candidate will provide technical leadership across memory bitcell development, process integration, silicon characterization, reliability qualification, and reusable memory IP enablement.

This role will operate in a cross-functional Memory Center of Excellence environment, partnering with device engineering, process integration, circuit design, characterization, manufacturing, reliability, and product teams. The position will help convert silicon learning into technology standards, design rules, compact models, IP release collateral, and reliability guardrails for embedded memory platforms.

• Lead development of advanced embedded memory technologies with emphasis on ReRAM and other emerging non-volatile memory solutions.

• Define memory technology requirements including PPA targets, density goals, endurance, retention, cost, yield, and manufacturability criteria.

• Drive bitcell and array architecture evaluations, including topology selection, assist schemes, variability assessment, margin analysis, and DFM assumptions.

• Plan and execute silicon learning activities, including test-chip definition, split/DOE planning, metrology, electrical characterization, and data analysis.

• Analyze read/write behavior, endurance, retention, disturb mechanisms, variation, failure Pareto trends, and model-to-silicon correlation.

• Partner with process integration and module teams to align FEOL/BEOL process modules, integration assumptions, and manufacturing readiness.

• Translate silicon learning into design rules, compact models, memory assumptions, characterization specifications, and reusable technology collateral.

• Support memory IP development including periphery assumptions, compiler needs, verification criteria, release checklist, and sign-off constraints.

• Define reliability stress plans, qualification gates, activation energy assumptions, failure-mode investigations, and risk register updates 

• Lead cross-functional technical reviews, roadmap discussions, risk escalations, decision gates, and action closure across memory development workstreams.

• Mentor engineers and communicate complex technical tradeoffs clearly to design, product, manufacturing, quality, and leadership stakeholders.

• Master of Science or Ph.D. in Electrical Engineering, Materials Science, Physics, Semiconductor Engineering, or a related technical discipline.

• 5-10 years of relevant semiconductor industry experience in technology development, process integration, device engineering, characterization, reliability, or memory development.

• Strong understanding of semiconductor devices, wafer fabrication, process integration, and electrical characterization methodologies.

• Experience planning and analyzing DOE/split experiments, silicon learning vehicles, statistical data sets, yield learning, or technology qualification data.

• Knowledge of memory characterization methods including read, write, retention, endurance, variability, margin, and failure-mode evaluation.

• Working knowledge of device modeling, compact model correlation, SPICE/TCAD simulation concepts, or circuit-to-silicon correlation.

• Familiarity with semiconductor reliability principles and qualification methodologies such as HTOL, retention, endurance, ESD, latch-up, and failure analysis.

• Demonstrated ability to lead complex cross-functional engineering efforts from concept through silicon learning and qualification readiness.

• Excellent written and verbal communication skills with ability to present technical recommendations, risks, and tradeoffs to cross-functional teams.