Process Engineering Intern

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Texas Instruments is seeking a Process Engineering Intern within the Analog Technology Development (ATD) Group. We work to define and develop the next generation process and device technologies for TI. The metal system is critical for achieving reliable, low resistance interconnects for power devices, for enabling area scaling and high process yields to drive cost leadership and to achieve high precision resistors and capacitor components. The interconnect process integration engineer is a key member of a team that defines and develops the processes and process flows to achieve the interconnect performance and reliability needs, whether it be low resistance with good electro-migration capability for the latest high current applications or high precision resistors for high performance amplifiers. The role includes activities such as:

• defining electrical test circuits to assess process capability versus design rule,
• characterizing and analyzing process yield data,
• assessing the reliability of the metal and dielectric of the interconnect system,
• and then working within the team to drive the necessary actions to meet the yield and reliability needs for the technology. 

Minimum requirements:

• Currently pursuing PhD in areas such as Materials Science, Electrical Engineering, Physics, Chemistry or related engineering degree.
• Cumulative 3.0/4.0 GPA or higher

Preferred qualifications:

• Strong materials background in metal and/or dielectrics
• Strong verbal and written communication skills
• Ability to work in teams and collaborate effectively with people in different functions
• Ability to take the initiative and drive for results, influential relationships
• Good listener and excellent verbal and written communication skills